Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
نویسندگان
چکیده
منابع مشابه
Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition
GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1995
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.88.861